Cvd Graphene Copper Etching

For the fecl 3 etchant we found that the average size of the.

Cvd graphene copper etching.

2a and b show the etching time evolution of the graphene domain size on the copper foils etched by an fecl 3 or an nh 4 2 s 2 o 8 etchant. Synthesis of graphene films on copper foils by chemical vapor deposition. Graphene grown on copper by chemical vapor deposition cvd has been significantly explored for the synthesis of high quality graphene since the popular recipe for single layer graphene growth was introduced in 2009 1 many years after the first report of the deposition of graphene on cu in 1992 2. We report a simple clean and highly anisotropic hydrogen etching method for chemical vapor deposited cvd graphene catalyzed by the copper substrate.

Advanced materials 2016 28 29 6247 6252. The pmma pva graphene copper foil block was floated on the surface of a solution of 0 3 m ammonium persulfate aldrich 98 at 0 c for 24 h to etch the copper foil. By exposing cvd graphene on copper foil to hydrogen flow around 800 c we observed that the initially continuous graphene can be etched to have many hexagonal openings. After the copper was etched the pmma pva graphene block was rinsed with deionized water three times at 0 c and transferred onto a 100 nm thick sio 2 si substrate.

In addition we found that the etching is temperature dependent. Figure 4 shows the raman spectra of the cvd grown bilayer graphene transferred onto pet wafers using the three different etching solutions.